What is OptiMOS™ Power MOSFET

2:18 AM

OptiMOS MOSFET is Infineon's latest generation N-channel power MOSFETs in 200V and 250V that is optimized specially for dc-dc conversion. It is trademark registered by Infineon N-Channel Power MOSFETs that are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages. They have superior reverse recovery behaviour due to body diode with low QRR

and sufficiently soft IV charecteristics thus making it an ultimate choice for applications that need freewheeling. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion [2]. A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost [3].
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. They are lead and helogan free products. They are well suited to be used in harsh enviroments. They are fast, have less conduction losses and suitbale for variety of applications

Applications [1]
  • Highly efficient power supplies
  • Solar PV microinverters
  • AC-DC adapters for notebooks and plasma screens 
  • Battery chargers
  • Class D amplifiers
  • Voltage regulators
  • Telecommunication applications
  • Synchronous rectification
  • High power density point of load converters

References:
  1. Siemieniec, R.; Hirler, F.; Schlogl, A.; Rosch, M.; Soufi-Amlashi, N.; Ropohl, J.; Hiller, Uli, "A New Fast and Rugged 100 V Power MOSFET," Power Electronics and Motion Control Conference, 2006. EPE-PEMC 2006. 12th International , vol., no., pp.32,37, Aug. 30 2006-Sept. 1 2006 doi: 10.1109/EPEPEMC.2006.4778371
  2. http://bit.ly/ZzZ9tC
  3. http://bit.ly/1qJWZxP

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